valence band

The effects of strain and coupling among heavy hole, light hole, and spin split off bands on valence band structure are discussed.

分析了应变状态以及重轻空穴和自旋轨道分裂带相互作用对子带结构的影响。

The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band.

填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。

Heavy impurity doping makes the conduction and valence bands shift, and brings about the so-called Band Gap Narrowing ( BGN).

重掺杂使导带、价带带边同时发生了收缩，从而产生能带变窄效应（BGN）。

By fitting of band-to-band absorption edges, the bandgap of Si conduction band to Ge valence band is acquired.

通过对锗硅量子点和量子阱材料的光电流谱的带间跃迁吸收边的拟合，得到了硅导带到锗价带的能带宽度分别为1.043eV和1.050eV。

Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.

价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；

Effective masses at the top of valence band and at the bottom of conduction band were deduced from band structure.

价带顶和导带底的有效质量从计算得到的能带结构中求出。

NO2 adsorption in this site makes some changes to partial density of state ( PDOS) of surface atoms, and produces extra energy level near the valence band in band gap.

NO2在此位置的吸附改变了表面各原子的分波态密度，并且在靠近价带的位置产生了额外的受主能级。

Thus, the associated electron transition among the valence band, the conduction band and the gap states results in the red-shift of light absorption.

因此，相关的价带、导带和隙态的电子跃迁导致吸收边红移。

XPS and Their Valence Band Spectra Studies of the substituted Titanocene, Zirconocene and Hafnocene Dichloride Complexes

取代环戊二烯钛、锆、铪络合物的XPS及其价带谱研究

There are four surface state bands in the gap. Among them, two occupied surface state bands have been confirmed by valence band spectra of synchrotron radiation photoelectron spectroscopy.

在带隙附近存在四个表面态带，其中的两个占有表面态带已由价带的同步辐射光电子能谱实验得到证实。

By taking into account the light hole and heavy hole valence band structures and their combined density of states, the expression of saturation absorption is deduced from the imaginary part of the susceptibility, which is similar to the mode of inhomogeneous broadening of two-level system.

考虑了锗中轻、重空穴价带的能带结构并利用轻、重空穴价带的复合态密度，由电极化率的虚部推得类似于非均匀展宽两能级系统模型的饱和吸收具有的形式。

The reason is that their valence band is full of electrons, which obstructs current flow.

因为它们的价带填满了电子, 使电流无法流动.

The valence band maximum is a flat band; whereas the conduction band minimum is a parabolic band.

能带中价带顶是一条平坦的能带，而导带底为具有抛物线形状的能带。